Japanese nano-technology development companies SCIVAX company, has developed a light-emitting diodes can (LED) brightness increased by 30% technology. Developed LED technology is the material constituting the surface of silicon made from a special mold, impose fine processing, out of many nanometer-sized holes, improve light penetration, so that the brightness increase.
In the sapphire (sapphire) substrate overlap LED made of gallium nitride and other materials to components. The component of the GaN top layer, coated on the resin, and then tightly bet a diameter of about 200 nm, there are numerous tiny holes in silicon flat-panel mold. In accordance with the form of mold (pattern) slashing the edge of the resin.
Then, as long as the aligned ion beam (ion beam), slashing the resin is not part of the GaN, we can form tiny holes. Holes of about 200 nm in diameter, depth, 160 nm. In this part installed on the electrodes, connected to the voltage to light, with no micro-holes compared to the situation, brightness can increase two to three into.
With micro-holes, the internal components of the light does not spread and thus be able to better the efficiency of distributed out. In addition to the organic EL also be expected to have the same effects, if used in solar cells, so that the efficiency of absorption of sunlight can be increased, will also be expected to improve the photoelectric conversion efficiency.
To make this part a smooth production, a newly developed 10 cm in diameter and 30 cm, a new mold. This new mold will be LED manufacturers and research institutions for the purpose of sale, and to be translated into practical objectives.
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