The following briefly describes the present time when all the company's technology and product line, the status quo.
The United States is the world's Cree's SiC as a substrate material using blue light-emitting diodes using epitaxial wafers and chips, one of the professional company, and its constantly improving the quality and increase outreach within the quantum efficiency at the same time, using thin-film (Thin-film ) chip technology to greatly enhance product brightness, thin-film chip technology that is the use of light-emitting layer of the substrate transfer technology to flip in the Si substrate, the thin-film chip technology can effectively solve problems and improve the chip's thermal efficiency of taking light. Cree's EZ Power LED chip product family uses thin-film chip technology has reached the level of industry-leading optical efficiency, according to reports by the end of 2009 showed, Cree R & D cool white LED device has reached the level of 186lm / W, which is power-type white LED has been reported since the best result. South Korea and China Taiwan region is also actively developing lighting-class power type high-brightness LED chip technology, LED industrial technology in these areas are rapidly catching up with the world leading level, and has a higher level. The major chip suppliers: Epistar (wafer), EpiValley, Forepi (Can Yuan), Huga (Canton Ga), etc.. China Taiwan, South Korea's high-end products in the main, the production of power type LED chips packaged into a white light-emitting efficiency of the device is generally 80 ~ 100lm / W, which is that Taiwan Epistar the relative level of technology leadership, its research and development has reached 120lm / W.
Japan's Nichia Corporation is the world's first white semiconductor manufacturers, technology level has always been a leading position. In the blue chip technology route, Nichia graphical sapphire substrate using epitaxial growth technology combined with a transparent conductive ITO layer of silicon technology, superior product performance, especially in low-power chips, the latest reports even reached 245lm / W performance indicators. Nichia's Power-based chip is also based on the structure being installed in 2008, Nichia announced its power-efficient LED light products to reach 145lm / W, chip specification is 1mm × 1mm.
German Osram company's early products based on SiC as a substrate material, have introduced the ATON and NOTA products. Recently, Osram's products and R & D direction is also based on thin-film chip technology and its latest R & D ThinGaN TOPLED using sapphire as a substrate material, the use of bonding, laser lift-off, the surface micro-structure and the use of technologies such as means of total reflection mirrors, chip out the light efficiency of reach 75%. According to the latest reports, at present, Osram power-type white LED luminous efficiency has been achieved 136lm / W.
U.S. Philips Lumileds company's power-type GaN blue LED chip is sapphire substrate as the epitaxial material, the chip has been in use flip-chip structure is the structure. With the development of thin film technology, Lumileds creatively integrated flip-chip technology and thin film technology, introduced a new thin-film flip-chip (Thin-film Flip-chip, TFFC) technology, integrated chips and packaging technology, to minimize heat resistance and improve the efficiency of taking light. At present, Lumileds power white light-based research and development level has a breakthrough 140lm / W.
U.S. SemiLEDs Corporation Osram and Cree, following the transfer of technology after the adoption of commercial production of thin-film substrate GaN vertical structure LED manufacturers. They introduced a new type of metal substrate vertical current excitation type light-emitting diode (Metal Vertical Photon Light Emitting Diodes, MvpLEDTM) product, packaged into a white light-emitting efficiency of the device can currently reach 120lm / W.
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